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| Composite Transistors UP0421x Series Silicon NPN epitaxial planar type Unit : mm For switching/digital circuits Features * Two elements incorporated into one package (Transistors with built-in resistor) * Reduction of the mounting area and assembly cost by one half (0.30) 6 5 4 0.20+0.05 -0.02 0.100.02 1.200.05 1.600.05 1 2 3 (0.50)(0.50) 1.000.05 1.600.05 5 (0.20) Display at No.1 lead 0.550.05 Resistance by Part Number * UP04210 * UP04211 * UP04213 * UP04214 * UP04215 * UP04216 Marking Symbol 8Z 9V 8S BR 8T 8U (R1) 47 k 10 k 47 k 10 k 10 k 4.7 k (R2) 10 k 47 k 47 k 5 (0.20) 0.10 max. 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) 0 to 0.02 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 125 125 -55 to +125 Unit V V mA mW C C Internal Connection 6 R1 Tr1 R2 R1 5 R2 4 Tr2 1 2 3 Publication date: December 2003 SJJ00002BED 1 UP0421x Series Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base UP04210/4215/4216 Symbol VCBO VCEO ICBO ICEO IEBO Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 Min 50 50 0.1 0.5 0.01 0.5 0.1 0.2 hFE VCE = 10 V, IC = 5 mA 160 35 80 VCE(sat) VOH VOL R1 IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k VCC = 5 V, VB = 3.5 V, RL = 1 k -30% 47 10 4.7 R1 / R 2 fT VCB = 10 V, IE = -2 mA, f = 200 MHz 0.8 0.17 1.0 0.21 150 1.2 0.25 MHz +30% k 4.9 0.2 0.25 V V V 460 Typ Max Unit V V A A mA cutoff current UP04211 (Collector open) UP04213 UP04214 Forward current UP04210/4215/4216 transfer ratio UP04211 UP04213/4214 Collector-emitter saturation voltage Output voltage high-level Output voltage low-level UP04213 Input resistance UP04210/4213 UP04211/4214/4215 UP04216 Resistance ratio UP04211/4213 UP04214 Transition frequency Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta 150 Total power dissipation PT (mW) 125 100 75 50 25 0 0 40 80 120 160 Ambient temperature Ta (C) 2 SJJ00002BED UP0421x Series Characteristics charts of UP04210 IC VCE Collector-emitter saturation voltage VCE(sat) (V) 120 IB = 1.0 mA Ta = 25C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 10 VCE(sat) IC IC / IB = 10 hFE IC 300 VCE = 10 V Ta = 75C 80 Forward current transfer ratio hFE Collector current IC (mA) 1 200 25C -25C 0.2 mA 40 0.1 mA 0.1 Ta = 75C 25C -25C 100 0 0 2 4 6 8 10 12 0.01 0.1 1 10 100 0 0.1 1 10 100 1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) IO VIN 10 VO = 5 V Ta = 25C 100 VIN IO VO = 0.2 V Ta = 25C Output current IO (mA) Input voltage VIN (V) 0 1 2 10 1 1 0.1 0.1 1 10 100 Input voltage VIN (V) Output current IO (mA) Characteristics charts of UP04211 IC VCE Collector-emitter saturation voltage VCE(sat) (V) IB = 1.0 mA 120 Ta = 25C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 1 VCE(sat) IC IC / IB = 10 hFE IC VCE = 10 V Forward current transfer ratio hFE 200 Collector current IC (mA) Ta = 75C 25C -25C Ta = 75C 0.1 25C 100 0.2 mA 40 -25C 0.1 mA 0 0 2 4 6 8 10 12 0.01 1 10 100 1 000 0 1 10 100 1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJJ00002BED 3 UP0421x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz Ta = 25C IO VIN 100 VO = 5 V Ta = 25C VIN IO 10 VO = 0.2 V Ta = 25C Output current IO (mA) 1 1 Input voltage VIN (V) 1.2 1.4 1.6 1.8 2.0 10 1 0.1 0.1 0 10 20 30 0.01 1.0 0.1 0.1 1 10 100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UP04213 IC VCE IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 10 IC / IB = 10 hFE IC 320 VCE = 10 V Collector current IC (mA) 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA Forward current transfer ratio hFE 120 Ta = 75C 240 25C 1 160 -25C 0.2 mA 40 0.1 mA 0.1 Ta = 75C -25C 25C 80 0 0 2 4 6 8 10 12 0.01 0.1 1 10 100 0 0.1 1 10 100 1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz Ta = 25C IO VIN 100 VO = 5 V Ta = 25C 100 VIN IO VO = 0.2 V Ta = 25C Output current IO (mA) Input voltage VIN (V) 10 10 1 1 1 0.1 0 10 20 30 40 0 4 8 12 0.1 0.1 1 10 100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 SJJ00002BED UP0421x Series Characteristics charts of UP04214 IC VCE Collector-emitter saturation voltage VCE(sat) (V) Ta = 25C 120 IB = 1.0 mA 1 VCE(sat) IC 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA IC / IB = 10 300 hFE IC VCE = 10 V Ta = 75C 25C 200 80 0.3 mA Ta = 75C 0.1 25C -25C Forward current transfer ratio hFE Collector current IC (mA) -25C 100 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 0.01 1 10 100 1 000 0 0.1 1 10 100 1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz Ta = 25C 100 IO VIN VO = 5 V Ta = 25C 10 VIN IO VO = 0.2 V Ta = 25C Output current IO (mA) Input voltage VIN (V) 10 1 1 0.1 1 0 10 20 0.01 0 1 2 0.1 0.1 1 10 100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UP04215 IC VCE IB = 1.0 mA 120 Ta = 25C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 1 IC / IB = 10 400 Ta = 75C hFE IC VCE = 10 V Forward current transfer ratio hFE Collector current IC (mA) 25C 300 -25C 200 80 Ta = 75C 0.1 25C -25C 0.2 mA 40 0.1 mA 100 0 0 2 4 6 8 10 12 0.01 1 10 100 1 000 0 1 10 100 1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJJ00002BED 5 UP0421x Series Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz Ta = 25C 100 IO VIN VO = 5 V Ta = 25C 10 VIN IO VO = 0.2 V Ta = 25C Output current IO (mA) Input voltage VIN (V) 10 1 1 0 10 20 30 1 0.1 0 1 2 1 10 100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UP04216 IC VCE IB = 1.0 mA 120 Ta = 25C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 1 IC / IB = 10 hFE IC 300 Ta = 75C 25C -25C VCE = 10 V Forward current transfer ratio hFE Collector current IC (mA) 0.1 25C Ta = 75C 200 0.2 mA 40 0.1 mA 100 -25C 0 0 2 4 6 8 10 12 0.01 0.1 1 10 100 0 0.1 1 10 100 1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 f = 1 MHz Ta = 25C 100 IO VIN VO = 5 V Ta = 25C 10 VO = 0.2 V Ta = 25C VIN IO Output current IO (mA) 10 Input voltage VIN (V) 0.8 1.2 1 1 1 0.1 0 10 20 30 0.1 0.4 0.1 0.1 1 10 100 Collector-base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 6 SJJ00002BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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